On mechanisms to control SiO2 etching kinetics in low-power reactive-ion etching process using CF4 + C4F8 + Ar + He plasma
| Autor: | Choi, Gilyoung, Efremov, Alexander, Lee, Dae-Kug, Cho, Choong-Ho, Kwon, Kwang-Ho |
|---|---|
| Zdroj: | In Vacuum October 2023 216 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect