Low Al-content n-type Al[formula omitted]Ga[formula omitted]N layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
| Autor: | Stanishev, Vallery, Armakavicius, Nerijus, Gogova, Daniela, Nawaz, Muhammad, Rorsman, Niklas, Paskov, Plamen P., Darakchieva, Vanya |
|---|---|
| Zdroj: | In Vacuum November 2023 217 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect