Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition

Autor: Feng, Zhe Chuan, Lin, Hao-Hsiung, Xin, Bin, Tsai, Shi-Jane, Saravade, Vishal, Yiin, Jeffrey, Klein, Benjamin, Ferguson, Ian T.
Zdroj: In Vacuum January 2023 207
Databáze: ScienceDirect