Resistance switching characteristics of Ag/ZnO/graphene resistive random access memory
| Autor: | Tian, Ruizhao, Li, Lianyue, Yang, Kanyu, Yang, Zhengchun, Wang, Hanjie, Pan, Peng, He, Jie, Zhao, Jinshi, Zhou, Baozeng |
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| Zdroj: | In Vacuum January 2023 207 |
| Databáze: | ScienceDirect |
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