Improved dielectric properties of La2O3–ZrO2 bilayer films for novel gate dielectrics

Autor: Li, Shuan, Lin, Youyu, Li, Guoling, Yu, Hongen, Tang, Siyao, Wu, Yiman, Li, Xingguo, Tian, Wenhuai
Zdroj: In Vacuum August 2020 178
Databáze: ScienceDirect