Physical and electrical properties of flash memory devices with nickel oxide(NiO2) charge trapping layer
| Autor: | Lee, Ming Ling, Chen, Hsiang, Kao, Chyuan Haur, Mahanty, Rama Krushna, Sung, Wei Kung, Lin, Chun Fu, Lin, Chan Yu, Chang, Kow Ming |
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| Zdroj: | In Vacuum June 2017 140:47-52 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect