Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates
Autor: | Kakushima, K., Seki, T., Wakabayashi, H., Tsutsui, K., Iwai, H. |
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Zdroj: | In Vacuum June 2017 140:14-18 |
Databáze: | ScienceDirect |
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