Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure
Autor: | Filonovich, S.A., Águas, H., Bernacka-Wojcik, I., Gaspar, C., Vilarigues, M., Silva, L.B., Fortunato, E., Martins, R. |
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Zdroj: | In Vacuum 2009 83(10):1253-1256 |
Databáze: | ScienceDirect |
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