Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

Autor: Filonovich, S.A., Águas, H., Bernacka-Wojcik, I., Gaspar, C., Vilarigues, M., Silva, L.B., Fortunato, E., Martins, R.
Zdroj: In Vacuum 2009 83(10):1253-1256
Databáze: ScienceDirect