Defect-impurity complexes with high thermal stability in epi-Si n +-p diodes irradiated with MeV electrons
Autor: | Korshunov, F.P., Lastovskii, S.B., Markevich, V.P., Murin, L.I., Bogatyrev, Yu.V., Peaker, A.R. |
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Zdroj: | In Vacuum 2009 83 Supplement 1:S131-S133 |
Databáze: | ScienceDirect |
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