Defect-impurity complexes with high thermal stability in epi-Si n +-p diodes irradiated with MeV electrons

Autor: Korshunov, F.P., Lastovskii, S.B., Markevich, V.P., Murin, L.I., Bogatyrev, Yu.V., Peaker, A.R.
Zdroj: In Vacuum 2009 83 Supplement 1:S131-S133
Databáze: ScienceDirect