Strain profiles and defect structure in 6H–SiC crystals implanted with 2 MeV As + ions
| Autor: | Wierzchowski, Wojciech, Wieteska, Krzysztof, Graeff, Walter, Turos, Andrzej, Grötzschel, Rainer, Stonert, Anna, Ratajczak, Renata |
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| Zdroj: | In Vacuum 2009 83 Supplement 1:S40-S44 |
| Databáze: | ScienceDirect |
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