State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

Autor: Tala-Ighil, B., Rahal, A., Mourgues, K., Toutah, A., Pichon, L., Mohammed-Brahim, T. *, Raoult, F., Bonnaud, O.
Zdroj: In Thin Solid Films 1999 337(1):101-104
Databáze: ScienceDirect