Angle-resolved X-ray photoelectron spectroscopy intensity modeling of SiNx ultrathin layer grown on Si (100) and Si (111) substrates by N2 plasma treatment
| Autor: | Beji, Hiba, Develay, Valentin, Monier, Guillaume, Bideux, Luc, Hoggan, Philip E., Bousquet, Angelique, Tomasella, Eric, Robert-Goumet, Christine |
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| Zdroj: | In Thin Solid Films 15 June 2024 798 |
| Databáze: | ScienceDirect |
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