Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

Autor: Takenaka, Kosuke, Nunomura, Shota, Hayashi, Yuji, Komatsu, Hibiki, Toko, Susumu, Tampo, Hitoshi, Setsuhara, Yuichi
Zdroj: In Thin Solid Films 15 February 2024 790
Databáze: ScienceDirect