Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance
Autor: | Takenaka, Kosuke, Nunomura, Shota, Hayashi, Yuji, Komatsu, Hibiki, Toko, Susumu, Tampo, Hitoshi, Setsuhara, Yuichi |
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Zdroj: | In Thin Solid Films 15 February 2024 790 |
Databáze: | ScienceDirect |
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