Multi-level resistive write-once-read-many memory device based on CdSe/ZnS quantum dots and ZnO nanoparticles
| Autor: | Kim, Na-Ri, Kim, Sae-Wan, Bae, Jin-Hyuk, Kang, Shin-Won |
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| Zdroj: | In Thin Solid Films 1 September 2020 709 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect