Enhanced zirconia oxide dielectric quality of germanium p-channel metal oxide semiconductor field effect transistor by in-situ low temperature treatment in atomic layer deposition process

Autor: Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Li, Ji-Syuan, Yi, Shih-Han
Zdroj: In Thin Solid Films 1 May 2020 701
Databáze: ScienceDirect