Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks

Autor: Mallem, Kumar, Jagadeesh Chandra, S.V., Ju, Minkyu, Dutta, Subhajit, Phanchanan, Swagata, Sanyal, Simpy, Pham, Duy Phong, Hussain, Shahzada Qamar, Kim, Youngkuk, Park, Jinjoo, Cho, Young-Hyun, Cho, Eun-Chel, Yi, Junsin
Zdroj: In Thin Solid Films 1 April 2019 675:16-22
Databáze: ScienceDirect
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