Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films
| Autor: | Klak, M.M., Zatryb, G., Golacki, L.W., Benzo, P., Labbé, C., Cardin, J., Misiewicz, J., Gourbilleau, F., Podhorodecki, A. |
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| Zdroj: | In Thin Solid Films 1 April 2019 675:5-10 |
| Databáze: | ScienceDirect |
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