Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

Autor: Goto, Ken, Konishi, Keita, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Higashiwaki, Masataka, Kuramata, Akito, Yamakoshi, Shigenobu
Zdroj: In Thin Solid Films 30 November 2018 666:182-184
Databáze: ScienceDirect