The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure
| Autor: | Ruan, Dun-Bao a, Liu, Po-Tsun b, ⁎, Gan, Kai-Jhih a, Chiu, Yu-Chuan b, Yu, Min-Chin b, Chien, Ta-Chun b, Chen, Yi-Heng b, Kuo, Po-Yi b, Sze, Simon M. a |
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| Zdroj: | In Thin Solid Films 30 November 2018 666:94-99 |
| Databáze: | ScienceDirect |
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