Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 μm
Autor: | Guizani, I., Bilel, C., Habchi, M.M., Rebey, A., El Jani, B. |
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Zdroj: | In Thin Solid Films 30 May 2017 630:66-70 |
Databáze: | ScienceDirect |
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