Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 μm

Autor: Guizani, I., Bilel, C., Habchi, M.M., Rebey, A., El Jani, B.
Zdroj: In Thin Solid Films 30 May 2017 630:66-70
Databáze: ScienceDirect