Optical characterization and carriers transfer between localized and delocalized states in Si-doped GaAsN/GaAs epilayer

Autor: Hassen, F., Zaaboub, Z., Bouhlel, M., Naffouti, M., Maaref, H., Garni, N.M.
Zdroj: In Thin Solid Films 2 November 2015 594 Part A:168-171
Databáze: ScienceDirect