Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

Autor: Oikawa, H., Akiyama, R., Kanazawa, K., Kuroda, S., Harayama, I., Nagashima, K., Sekiba, D., Ashizawa, Y., Tsukamoto, A., Nakagawa, K., Ota, N.
Zdroj: In Thin Solid Films 1 January 2015 574:110-114
Databáze: ScienceDirect