Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator
Autor: | Oikawa, H., Akiyama, R., Kanazawa, K., Kuroda, S., Harayama, I., Nagashima, K., Sekiba, D., Ashizawa, Y., Tsukamoto, A., Nakagawa, K., Ota, N. |
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Zdroj: | In Thin Solid Films 1 January 2015 574:110-114 |
Databáze: | ScienceDirect |
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