The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
| Autor: | Tülek, R., Arslan, E., Bayraklı, A., Turhan, S., Gökden, S., Duygulu, Ö., Kaya, A.A., Fırat, T., Teke, A., Özbay, E. |
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| Zdroj: | In Thin Solid Films 31 January 2014 551:146-152 |
| Databáze: | ScienceDirect |
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