Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application
| Autor: | Su, Meiying, Yu, Daquan, Liu, Yijun, Wan, Lixi, Song, Chongshen, Dai, Fengwei, Xue, Kai, Jing, Xiangmeng, Guidotti, Daniel |
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| Zdroj: | In Thin Solid Films 1 January 2014 550:259-263 |
| Databáze: | ScienceDirect |
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