Dislocation behavior of surface-oxygen-concentration controlled Si wafers
| Autor: | Asazu, Hirotada, Takeuchi, Shotaro, Sannai, Hiroya, Sudo, Haruo, Araki, Koji, Nakamura, Yoshiaki, Izunome, Koji, Sakai, Akira |
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| Zdroj: | In Thin Solid Films 30 April 2014 557:106-109 |
| Databáze: | ScienceDirect |
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