Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

Autor: Oda, Katsuya, Okumura, Tadashi, Tani, Kazuki, Saito, Shin-ichi, Ido, Tatemi
Zdroj: In Thin Solid Films 30 April 2014 557:355-362
Databáze: ScienceDirect