The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors
| Autor: | Lee, Sunghwan, Park, Hongsik, Paine, David C. |
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| Zdroj: | In Thin Solid Films 1 March 2012 520(10):3769-3773 |
| Databáze: | ScienceDirect |
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