Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method

Autor: Minami, K., Nakamura, Y., Yamasaka, S., Yoshitake, O., Kikkawa, J., Izunome, K., Sakai, A.
Zdroj: In Thin Solid Films 1 February 2012 520(8):3232-3235
Databáze: ScienceDirect