Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices
| Autor: | Loubet, Nicolas, Adam, Thomas, Raymond, Mark, Liu, Qing, Cheng, Kangguo, Sreenivasan, Raghavasimhan, Reznicek, Alexander, Khare, Prasanna, Kleemeier, Walter, Paruchuri, Vamsi, Doris, Bruce, Sampson, Ron |
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| Zdroj: | In Thin Solid Films 1 February 2012 520(8):3149-3154 |
| Databáze: | ScienceDirect |
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