Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors
| Autor: | Moriyama, Yoshihiko, Kamimuta, Yuuichi, Ikeda, Keiji, Tezuka, Tsutomu |
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| Zdroj: | In Thin Solid Films 1 February 2012 520(8):3236-3239 |
| Databáze: | ScienceDirect |
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