Sb mediated formation of Ge/Si quantum dots: Growth and properties

Autor: Tonkikh, A.A., Zakharov, N.D., Novikov, A.V., Kudryavtsev, K.E., Talalaev, V.G., Fuhrmann, B., Leipner, H.S., Werner, P.
Zdroj: In Thin Solid Films 1 February 2012 520(8):3322-3325
Databáze: ScienceDirect
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