Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors

Autor: Hwang, Sooyeon, Lee, Ju Ho, Woo, Chang Ho, Lee, Jeong Yong, Cho, Hyung Koun
Zdroj: In Thin Solid Films 2011 519(15):5146-5149
Databáze: ScienceDirect