Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

Autor: Laha, Pinaki, Panda, A.B., Dahiwale, S., Date, K., Patil, K.R., Barhai, P.K., Das, A.K., Banerjee, I., Mahapatra, S.K.
Zdroj: In Thin Solid Films 2010 519(5):1530-1535
Databáze: ScienceDirect