Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure
Autor: | Laha, Pinaki, Panda, A.B., Dahiwale, S., Date, K., Patil, K.R., Barhai, P.K., Das, A.K., Banerjee, I., Mahapatra, S.K. |
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Zdroj: | In Thin Solid Films 2010 519(5):1530-1535 |
Databáze: | ScienceDirect |
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