Development of analytical model for strained silicon relaxation on (100) fully relaxed Si 0.8Ge 0.2 pseudo-substrates
| Autor: | Figuet, C., Kononchuk, O. |
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| Zdroj: | In Thin Solid Films 2010 518(9):2458-2461 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Figuet, C., Kononchuk, O. |
|---|---|
| Zdroj: | In Thin Solid Films 2010 518(9):2458-2461 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect