Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
| Autor: | D'Costa, V.R., Fang, Y.-Y., Tolle, J., Kouvetakis, J., Menéndez, J. |
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| Zdroj: | In Thin Solid Films 2010 518(9):2531-2537 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect