Single-crystalline Si grown on single-crystalline Gd 2O 3 by modified solid-phase epitaxy

Autor: Fissel, A., Dargis, R., Bugiel, E., Schwendt, D., Wietler, T., Krügener, J., Laha, A., Osten, H.J.
Zdroj: In Thin Solid Films 2010 518(9):2546-2550
Databáze: ScienceDirect