The influence of reactor pressure on qualities of GaN layers grown by hydride vapor phase epitaxy

Autor: Cao, X.C., Xu, D.L., Guo, H.M., Liu, C.J., Yin, Z.J., Li, X.H., Qiu, K., Wang, Y.Q.
Zdroj: In Thin Solid Films 2009 517(6):2088-2091
Databáze: ScienceDirect
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