Hysteresis in metal insulator semiconductor structures with high temperature annealed ZrO 2/SiO x layers

Autor: Gueorguiev, Valentin K., Aleksandrova, Petya V., Ivanov, Tzvetan E., Koprinarova, Jordanka B.
Zdroj: In Thin Solid Films 2009 517(5):1815-1820
Databáze: ScienceDirect