Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon
| Autor: | Cammilleri, D., Fossard, F., Débarre, D., Tran Manh, C., Dubois, C., Bustarret, E., Marcenat, C., Achatz, P., Bouchier, D., Boulmer, J. |
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| Zdroj: | In Thin Solid Films 2008 517(1):75-79 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect