Influence of the GaAs substrate orientation on the composition of Ga xIn 1 − xP ( x ≈ 0.5) grown by LPE and MOCVD

Autor: Mishurnyi, V.A., de Anda, F., Gorbatchev, A.Yu., Kudriavtsev, Yu., Elyukhin, V.A., Prutskij, T., Pelosi, C., Bocchi, C., Ber, B.Y., Vazquez, F.E. Ortiz
Zdroj: In Thin Solid Films 2008 516(22):8092-8095
Databáze: ScienceDirect