Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)
Autor: | Fang, Y.-Y. a, D'Costa, V.R. b, ⁎, Tolle, J. a, Poweleit, C.D. b, Kouvetakis, J. a, Menéndez, J. b |
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Zdroj: | In Thin Solid Films 2008 516(23):8327-8332 |
Databáze: | ScienceDirect |
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