Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)

Autor: Fang, Y.-Y. a, D'Costa, V.R. b, ⁎, Tolle, J. a, Poweleit, C.D. b, Kouvetakis, J. a, Menéndez, J. b
Zdroj: In Thin Solid Films 2008 516(23):8327-8332
Databáze: ScienceDirect