Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation

Autor: Dogan, P., Rudigier, E., Fenske, F., Lee, K.Y., Gorka, B., Rau, B., Conrad, E., Gall, S.
Zdroj: In Thin Solid Films 2008 516(20):6989-6993
Databáze: ScienceDirect