Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

Autor: Lei, Benliang, Yu, Guanghui, Ye, Haohua, Meng, Sheng, Wang, Xinzhong, Lin, Chaotong, Qi, Ming, Li, Aizhen, Nouet, Gérard, Ruterana, Pierre, Chen, Jun
Zdroj: In Thin Solid Films 2008 516(12):3772-3775
Databáze: ScienceDirect