Electrical properties of Al 2O 3–HfTiO laminate gate dielectric stacks with an equivalent oxide thickness below 0.8 nm
| Autor: | Mikhelashvili, V., Eisenstein, G. |
|---|---|
| Zdroj: | In Thin Solid Films 2007 515(7):3704-3708 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Mikhelashvili, V., Eisenstein, G. |
|---|---|
| Zdroj: | In Thin Solid Films 2007 515(7):3704-3708 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect