The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors
| Autor: | Chang, A.C.K., Ross, I.M., Norris, D.J., Cullis, A.G., Tang, Y.T., Cerrina, C., Evans, A.G.R. |
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| Zdroj: | In Thin Solid Films 2006 496(2):306-310 |
| Databáze: | ScienceDirect |
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