Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
| Autor: | Ng, T.H., Ho, V., Teo, L.W., Tay, M.S., Koh, B.H., Chim, W.K. *, Choi, W.K., Du, A.Y., Tung, C.H. |
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| Zdroj: | In Thin Solid Films 2004 462:46-50 |
| Databáze: | ScienceDirect |
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