Infrared spectroscopic ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI

Autor: Defranoux, C. *, Emeraud, T., Bourtault, S., Venturini, J., Boher, P., Hernandez, M., Laviron, C., Noguchi, T.
Zdroj: In Thin Solid Films 2004 455:150-156
Databáze: ScienceDirect