Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic application

Autor: Gevorkyan, V.A. *, Aroutiounian, V.M., Gambaryan, K.M., Kazaryan, M.S., Touryan, K.J., Wanlass, M.W.
Zdroj: In Thin Solid Films 2004 451:124-127
Databáze: ScienceDirect