Growth and optical properties of epitaxial GaN films on Si(1 1 1) using single gas-source molecular beam epitaxy
| Autor: | Torrison, Levi a, Tolle, John a, Tsong, Ignatius S.T. b, Kouvetakis, John a, * |
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| Zdroj: | In Thin Solid Films 2003 434(1):106-111 |
| Databáze: | ScienceDirect |
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