Characterization of Cat-CVD grown Si–C and Si–C–O dielectric films for ULSI applications

Autor: Takatsuji, K., Kawakami, M., Makita, Y., Murakami, K., Nakayama, H. *, Miura, Y., Shimoyama, N., Machida, H.
Zdroj: In Thin Solid Films 2003 430(1):116-119
Databáze: ScienceDirect